Silicon is doped with [tex] 10^{16} [/tex] cm[tex]^{ - 3} [/tex] boron atoms. Determine the carrier freezeout temperature range if the freezeout boundary is defined as the temperature at which the ionization of the doping atoms is 90%. The doping level of boron in silicon is 0.045 eV, and the degeneracy factor is g = 1/4. Assume constant effective density of states in the valence band, Nᵥ = 3.10 × [tex] {10}^{19} cm^{ - 3} [/tex].
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Silicon is doped with [tex] 10^{16} [/tex] cm[tex]^{ - 3} [/tex] boron atoms. Determine the carrier freezeout temperature range if the freezeout boundary is defined as the temperature at which the ionization of the doping atoms is 90%. The doping level of boron in silicon is 0.045 eV, and the degeneracy factor is g = 1/4. Assume constant effective density of states in the valence band, Nᵥ = 3.10 × [tex] {10}^{19} cm^{ - 3} [/tex].
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