The Bosch process is capable of producing deep features with exceptional anisotropy, etch-rate, and etch mask selectivity. This process consists of a three-step cycle: Film deposition, bottom film etching, and silicon etching.
Deep reactive ion etching (DRIE) of silicon to create high aspect ratio microstructures is one of the key processes in the advanced MEMS field and through silicon via (TSV) applications. However, conventional plasma etching processes are designed for etch depths of only a few microns and are lacking in etch-rate and etch mask selectivity. The Bosch process is capable of producing deep features with exceptional anisotropy, etch-rate, and etch mask selectivity.
This process consists of a three-step cycle: Film deposition, bottom film etching, and silicon etching. In the deposition process, a passivation film is deposited on the sidewalls and bottom surface of the trench. In the bottom film etching step, the passivation film on the trench bottom is selectively etche Rdd. In the silicon etching step, only the silicon at the trench bottom, where the passivation film has been removed, is etched (Fig. 1).
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Explanation:
The Bosch process is capable of producing deep features with exceptional anisotropy, etch-rate, and etch mask selectivity. This process consists of a three-step cycle: Film deposition, bottom film etching, and silicon etching.
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Answer:
Deep reactive ion etching (DRIE) of silicon to create high aspect ratio microstructures is one of the key processes in the advanced MEMS field and through silicon via (TSV) applications. However, conventional plasma etching processes are designed for etch depths of only a few microns and are lacking in etch-rate and etch mask selectivity. The Bosch process is capable of producing deep features with exceptional anisotropy, etch-rate, and etch mask selectivity.
This process consists of a three-step cycle: Film deposition, bottom film etching, and silicon etching. In the deposition process, a passivation film is deposited on the sidewalls and bottom surface of the trench. In the bottom film etching step, the passivation film on the trench bottom is selectively etche Rdd. In the silicon etching step, only the silicon at the trench bottom, where the passivation film has been removed, is etched (Fig. 1).
Explanation:
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